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Assanali SultanovResearcher

Kazakh-British Technical University Kazakhstan
Solar silicon cellsThin filmsSpin dopingX-ray crystallographyNanotechnologyMagnetron sputteringComputer simulationOptical materials

Expert profile

Assanali Sultanov, a Kazakhstani researcher, was born on 4 May 1997. From 2015 to 2019, he studied at Nanjing University of Science and Technology in China and obtained a bachelor’s degree in nanomaterials and nanotechnology. From 2019 to 2024, he pursued master’s and doctoral degrees at Kazakh-British Technical University, specializing in nanomaterials and nanotechnology. From January 2020 to May 2022, he served as a junior researcher at Kazakh-British Technical University and has been a researcher since May 2022, while also working on R&D planning, scientific direction planning and science and technology results commercialization.

His main research areas include solar silicon cells, thin-film technologies, spin doping, X-ray crystallography, nanotechnology, magnetron sputtering, computer simulation and optical materials. He has extensive research experience in magnetron-sputtered deposition of silicon carbide films, antireflection coatings and passivation properties. He has published eight academic papers in international journals including Optical Materials, Thin Solid Films and Materials Today: Proceedings, and contributed to academic works such as Physics Experiment Manual II.

The researcher is multilingual, with Kazakh and Russian as native languages, an IELTS score of 7.0 in English and elementary Chinese. He is proficient in experimental techniques including X-ray diffraction, X-ray reflectometry, Fourier-transform infrared spectroscopy, electron-beam deposition, spin coating and sputtering, and has comprehensive skills in digital analysis, computer modeling and scientific report writing. He received Nanjing University of Science and Technology’s 2019 Most Valuable Student Award for Cultural Exchange and completed the IFP School Energy Transition Innovation course series and training in surface analysis methods.

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